ハイブリッド型トランジスタ、GaNとSiCを一体化：産総研が作製、動作実証にも成功 - EE Times Japan
市場報導： 日本AIST成功試製GaN結合SiC功率半導體- 科技產業資訊室(iKnow)
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
Gallium Nitride (GaN) versus Silicon Carbide (SiC)
GaNとSiCによるハイブリッド型トランジスタの動作実証に産総研が成功 | TECH+（テックプラス）
パワーアプリケーションにおける、SiCとGaNの比較する際に考慮すべき点 - 半導体事業 - マクニカ
GaN on SiCが拡大する高周波デバイス市場、 残る課題はGaN on GaNで解決する可能性 | 日経クロステック（xTECH）
産総研：GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
來自愛沃特的GaN on SiC/Si基板提案：材料世界網
How SiC and GaN technology is affecting passive component development
A Week of GaN: 3 MMICs Target Ka-band, Reduced Area, and 5G Base Stations - News
Next-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism - News
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
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The Essential Steps for High Performance GaN on SiC RF Devices
High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces,ACS Applied Materials & Interfaces - X-MOL
Design Considerations with GaN & SiC - Power Electronics News
Schematic illustrations of epitaxial structures of GaN-on-SiC samples... | Download Scientific Diagram
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs
SiC vs GaN Head-to-Head Performance Comparison | GaN Systems
GaN Technology - GaN-on-Si - Transphorm
GaN：電力密度の限界を押し上げると同時に、効率も向上 | TI.com
SiC and GaN substrate markets to grow to $180m and $3m respectively in 2018, driven by rapid development of 5G and automotive technology
産総研：GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
Market analysis: "Who really requires GaN & SiC power devices ?"
SiC/GaN Poised for Power - Electronics-Lab.com
